Comparative simulation study of the different sources of statistical variability in contemporary floating-gate nonvolatile memory

IEEE Transactions on Electron Devices

Volumn 58, Issue 12, 2011, Pages 4155-4163

  Roy, Gareth ^a   Ghetti, Andrea ^b   Benvenuti, Augusto ^b   Erlebach, Axel ^c   Asenov, Asen ^a,d  

^a Gold Standard Simulations Ltd   (United Kingdom)

^b MICRON TECHNOLOGY INC   (United States)

^c SYNOPSYS SWITZERLAND LLC   (Switzerland)

^d UNIVERSITY OF GLASGOW   (United Kingdom)

Author keywords

Flash; floating gate (FG); impedance field method (IFM); interface trapped charge (ITC); line edge roughness (LER); nonvolatile memory (NVM); oxide thickness fluctuations (OTF); polysilicon granularity (PSG); random discrete dopants (RDD); variability

Indexed keywords

FLASH; FLOATING GATES; IMPEDANCE-FIELD METHOD (IFM); LINE EDGE ROUGHNESS; NON-VOLATILE MEMORIES; OXIDE THICKNESS FLUCTUATIONS (OTF); RANDOM DISCRETE DOPANTS (RDD); VARIABILITY;

COMPUTER SIMULATION; FLASH MEMORY; NORMAL DISTRIBUTION; NUMERICAL METHODS; POLYSILICON; STATISTICS;

ROUGHNESS MEASUREMENT;

EID: 82155188457     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2011.2167511     Document Type: Article

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