Simulation of statistical aspects of charge trapping and related degradation in bulk mosfets in the presence of random discrete dopants

IEEE Transactions on Electron Devices

Volumn 57, Issue 4, 2010, Pages 795-803

  Bukhori, Muhammad Faiz ^a   Roy, Scott ^a   Asenov, Asen ^a  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

Author keywords

MOSFET; Numerical simulation; Random dopants; Random telegraph signal (RTS); Reliability; Variability

Indexed keywords

MOS-FET; NUMERICAL SIMULATION; RANDOM DOPANTS; RANDOM TELEGRAPH SIGNAL (RTS); RANDOM TELEGRAPH SIGNALS;

CHARGE TRAPPING; COMPUTER SIMULATION; DEGRADATION; DOPING (ADDITIVES); MOSFET DEVICES; RELIABILITY; TELEGRAPH; THRESHOLD VOLTAGE;

FIELD EFFECT TRANSISTORS;

EID: 77950298777     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2010.2041859     Document Type: Article

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