Comprehensive investigation of statistical effects in nitride memories - Part I: Physics-based modeling

IEEE Transactions on Electron Devices

Volumn 57, Issue 9, 2010, Pages 2116-2123

  Mauri, Aurelio ^a   Monzio Compagnoni, Christian ^b,c   Amoroso, Salvatore Maria ^b,c   MacOni, Alessandro ^b,c   Ghetti, Andrea ^a   Spinelli, Alessandro S ^b,c,d   Lacaita, Andrea L ^b,c,d  

^a Numonyx   (Italy)

^b POLITECNICO DI MILANO   (Italy)

^c Italian University Nano Electronics Team IUNET   (Italy)

^d CNR   (Italy)

Author keywords

Atomistic doping; nitride memories; semiconductor device modeling; SONOS memories; TANOS memories

Indexed keywords

ATOMISTIC DOPING; NITRIDE MEMORIES; SEMICONDUCTOR DEVICE MODELING; SONOS MEMORY; TANOS MEMORIES;

ELECTRONS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR SWITCHES; THREE DIMENSIONAL; THRESHOLD VOLTAGE;

NITRIDES;

EID: 77956058949     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2010.2054472     Document Type: Article

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