Impact of Fermi level pinning at polysilicon gate grain boundaries on nano-MOSFET variability: A 3-D simulation study

ESSDERC 2006 - Proceedings of the 36th European Solid-State Device Research Conference

Volumn , Issue , 2006, Pages 451-454

  Brown, Andrew R ^a   Roy, Gareth ^a   Asenov, Asen ^a  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; GRAIN BOUNDARIES; MOSFET DEVICES; POLYSILICON; STATISTICAL METHODS;

3-D SIMULATION; FERMI LEVEL PINNING; NANO-MOSFET;

FERMI LEVEL;

EID: 84943201011     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDER.2006.307735     Document Type: Conference Paper

References (7)

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2. A. Asenov, and S. Saini, "Polysilicon: Gate Enhancement of the Random Dopant. Induced. Threshold Voltage Fluctuations in Sub 100 nm MOSFETs with Ultrathin Gate Oxide" IEEE Trans. on Eleotron Devices, Vol.47, No.4, pp.805-812, 2000
3. R. Difrenza, J. C. Vildeuil P. Llinares and G. Ghibaudo, "Impact of grain number fluctuations in MOS transistor gate on matching performance", Proc. International Conference on Microelectronic Test Structures, pp.244-249, 2003
4. A. Cathignol, K. Rochereau and G. Ghibaudo, "Impact of a single grain boundary in the polycrystalline silicon gate on sub 100nm bulk MOSFET characteristics. - implication on matching properties", Proc. 7 th European Workshop on Ultimate Integration of Silicon (ULIS), pp.145-148, 2006
5. S. Uma, A. D. McConnell, M. Asheghi, K. Kurabayashi and K. E. Goodson, "Temperature-Dependent Thermal Conductivity of Undoped Polycrystalline Silicon Layers", International Journal of Thermophysics, Vol,22, pp.605-616, 2001
6. A. Cathignol and G. Ghibaudo, ENSERG, Grenoble, France, personal communication, 2005
7. P. M. Walker, H. Mizuta, S. Uno, Y. Furuta and D. G. Hasko, "Improved off-current and subthreshold slope in aggressively scaled poly-si TFTs with a single grain boundary in the channel", IEEE Trans. on Electron Devices, Vol.51, No.2, pp.212-219, 2004