Modeling the VTH fluctuations in nanoscale floating gate memories

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Volumn , Issue , 2008, Pages 341-344

  Calderoni, A ^a   Fantini, P ^a   Ghetti, A ^a   Marmiroli, A ^a  

^a Numonyx   (Italy)

Author keywords

Component: Non volatile memory; Fluctuations; Modeling; Noise; Statistical distribution

Indexed keywords

MODELS; NANOTECHNOLOGY; NONVOLATILE STORAGE;

FLUCTUATIONS; NANOSCALE DIMENSIONS; NANOSCALE FLOATING-GATES; NOISE; NON-VOLATILE MEMORY; NON-VOLATILE MEMORY TECHNOLOGY; PHYSICALLY BASED MODELING; STATISTICAL DISTRIBUTION;

SEMICONDUCTOR DEVICES;

EID: 67650376040     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SISPAD.2008.4648234     Document Type: Conference Paper

References (7)

1. R. Gusmeroli et al., IEDM Tech Dig., p. 483,2006.
2. A. Ghetti et al., IRPS Proc., p. 610, 2008.
3. P. Fantini et al.., Electr. Dev. Lett., 28, 1114-1116 (2007).
4. A. Asenov et al., Tran. Electr. Dev. 50, 839-845 (2003).
5. Muller and Shultz, J. Appl. Phys. 79,4178-4180 (1996).
6. R. Lu et al., VLSI, p. 85,2008.
7. A. Asenov et al., IEEE Elect. Dev. Let., vol. 29 (2008).