Statistical enhancement of combined simulations of RDD and LER variability: What can simulation of a 105 sample teach us?

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2009, Pages

  Reid, Dave ^a   Millar, Campbell ^a   Roy, Gareth ^a   Roy, Scott ^a   Asenov, Asen ^a  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

3D SIMULATIONS; COMBINED EFFECT; COMBINED SIMULATION; COMPUTATIONAL COSTS; ENHANCEMENT TECHNIQUES; LINE EDGE ROUGHNESS; MOS-FET; RANDOM DOPANTS; SIMULATION RESULT; STATE OF THE ART; STATISTICAL ACCURACY; STATISTICAL ANALYSIS; STATISTICAL ENSEMBLES; STATISTICAL SAMPLES; STATISTICAL THRESHOLD VOLTAGE VARIATIONS;

COST REDUCTION; ELECTRON BEAM LITHOGRAPHY; ELECTRON DEVICES; PHOTORESISTS; ROUGHNESS MEASUREMENT; THREE DIMENSIONAL COMPUTER GRAPHICS;

STATISTICS;

EID: 77952402266     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2009.5424241     Document Type: Conference Paper

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