Physical modeling of single-trap RTS statistical distribution in flash memories

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2008, Pages 610-615

  Ghetti, A ^a   Bonanomi, M ^a   Compagnoni, C Monzio ^b,c   Spinelli, A S ^b,c,d   Lacaita, A L ^b,c,d   Visconti, A ^a  

^a STMICROELECTRONICS   (Italy)

^b POLITECNICO DI MILANO   (Italy)

^c IUNET

^d IFN CNR   (Italy)

Author keywords

Atomistic doping; Non volatile memory reliability; RTS

Indexed keywords

COMPUTER NETWORKS; DATA STORAGE EQUIPMENT; FLASH MEMORY; MODELS; RELIABILITY; STATISTICS; TELEGRAPH; THREE DIMENSIONAL;

ATOMISTIC DOPING; FLASH MEMORIES; NON-VOLATILE MEMORY RELIABILITY; RANDOM TELEGRAPH SIGNAL; RTS;

RANDOM PROCESSES;

EID: 51549084242     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2008.4558954     Document Type: Conference Paper

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