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Volumn , Issue , 2007, Pages 165-168

First evidence for injection statistics accuracy limitations in NAND Flash constant-current Fowler-Nordheim programming

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON DEVICES; FLASH MEMORY;

EID: 50249132614     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2007.4418892     Document Type: Conference Paper
Times cited : (66)

References (7)
  • 1
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    • Y. S. Shin, "Non-volatile memory technologies for beyond 2010," in 2005 Symp. VLSI Circ. Dig., pp. 156-159, 2005.
    • (2005) 2005 Symp. VLSI Circ. Dig , pp. 156-159
    • Shin, Y.S.1
  • 2
    • 0033116234 scopus 로고    scopus 로고
    • Single-electron memory for giga-to-tera bit storage
    • K. Yano, et al., "Single-electron memory for giga-to-tera bit storage," Proc. IEEE 87, pp. 633-651, 1999.
    • (1999) Proc. IEEE , vol.87 , pp. 633-651
    • Yano, K.1
  • 3
    • 21644487861 scopus 로고    scopus 로고
    • Impact of few electron phenomena on floating-gate memory reliability
    • G. Molas, et al., "Impact of few electron phenomena on floating-gate memory reliability," in IEDM Tech. Dig., pp. 877-880, 2004.
    • (2004) IEDM Tech. Dig , pp. 877-880
    • Molas, G.1
  • 4
    • 0029480949 scopus 로고
    • Fast and accurate programming method for multi-level NAND EEPROMs
    • G. J. Hemink, et al., "Fast and accurate programming method for multi-level NAND EEPROMs," in 1995 Symp. VLSI Tech. Dig., pp. 129-130, 1995.
    • (1995) 1995 Symp. VLSI Tech. Dig , pp. 129-130
    • Hemink, G.J.1
  • 5
    • 34548705679 scopus 로고    scopus 로고
    • The impact of random telegraph signals on the scaling of multilevel Flash memories
    • H. Kurata, et al., "The impact of random telegraph signals on the scaling of multilevel Flash memories," in 2006 Symp. VLSI Circ. Dig., pp. 140-141, 2006.
    • (2006) 2006 Symp. VLSI Circ. Dig , pp. 140-141
    • Kurata, H.1
  • 6
    • 46049115919 scopus 로고    scopus 로고
    • 2 by statistical random telegraph noise analysis
    • 2 by statistical random telegraph noise analysis," in IEDM Tech. Dig., pp. 483-486, 2006.
    • (2006) IEDM Tech. Dig , pp. 483-486
    • Gusmeroli, R.1
  • 7
    • 0019544106 scopus 로고    scopus 로고
    • Hot-electron injection into the oxide in n-channel MOS devices
    • B. Eitan, et al., "Hot-electron injection into the oxide in n-channel MOS devices," IEEE Trans. Electron Devices 28, pp. 328-340, 1999.
    • (1999) IEEE Trans. Electron Devices , vol.28 , pp. 328-340
    • Eitan, B.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.