Data Retention Characteristics of Sub-100 nm NAND Flash Memory Cells

IEEE Electron Device Letters

Volumn 24, Issue 12, 2003, Pages 748-750

  Lee, Jae Duk ^a   Choi, Jeong Hyuk ^a   Park, Donggun ^a   Kim, Kinam ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

Data retention; Endurance; Interface trap; NAND Flash memory; Tunnel oxide

Indexed keywords

ELECTRON TUNNELING; FLASH MEMORY; GATES (TRANSISTOR); INTERFACES (MATERIALS); LEAKAGE CURRENTS; STRESSES; THRESHOLD VOLTAGE;

DATA RETENTION; SUBTHRESHOLD SLOPES;

NAND CIRCUITS;

EID: 0347270401     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2003.820645     Document Type: Article

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