Enabling cutting-edge semiconductor simulation through grid technology

Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences

Volumn 367, Issue 1897, 2009, Pages 2573-2584

  Reid, Dave ^a   Millar, Campbell ^a   Roy, Scott ^a   Roy, Gareth ^a   Sinnott, Richard ^a   Stewart, Gordon ^a   Stewart, Graeme ^a   Asenov, Asen ^a  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

Author keywords

Nano complementary metal oxide semiconductor electronics; virtual organization; Security; Variability

Indexed keywords

METALLIC COMPOUNDS; MOS DEVICES; SEMICONDUCTOR DEVICE MANUFACTURE;

COMPLEMENTARY METAL OXIDE SEMICONDUCTORS; GRID TECHNOLOGIES; GRID-BASED; NANO CMOS; NANO COMPLEMENTARY METAL OXIDE SEMICONDUCTOR ELECTRONICS VIRTUAL ORGANIZATION; PHYSICAL PROCESS; PROGRESSIVE SCALING; SCIENTIFIC RESULTS; SECURITY; SEMICONDUCTOR INDUSTRY; STATISTICAL VARIATIONS; VARIABILITY;

TRANSISTORS;

EID: 67650293318     PISSN: 1364503X     EISSN: None     Source Type: Journal    
DOI: 10.1098/rsta.2009.0031     Document Type: Article

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