Reliability issues and models of sub-90nm NAND flash memory cells

ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings

Volumn , Issue , 2006, Pages 760-762

  Yang, Hong ^a   Kim, Hyunjae ^a   Park, Sung Il ^b   Kim, Jongseob ^b   Lee, Sung Hoon ^b   Choi, Jung Ki ^a   Hwang, Duhyun ^a   Kim, Chulsung ^a   Park, Mincheol ^a   Lee, Keun Ho ^a   Park, Young Kwan ^a   Shin, Jai Kwang ^b   Kong, Jeong Taek ^a  

^a SAMSUNG Electronics   (South Korea)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TRAPS; FLASH MEMORY; INTERFACES (MATERIALS); LEAKAGE CURRENTS; MATHEMATICAL MODELS; NAND CIRCUITS;

HIGH TEMPERATURE STORAGE; INTERFACE TRAP RECOVERY MODELS; NAND FLASH MEMORY CELLS; TRAP GENERATION MODELS;

ELECTRIC BATTERIES;

EID: 34547375009     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICSICT.2006.306478     Document Type: Conference Paper

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