Comprehensive investigation of statistical effects in nitride memories - Part II: Scaling analysis and impact on device performance

IEEE Transactions on Electron Devices

Volumn 57, Issue 9, 2010, Pages 2124-2131

  Monzio Compagnoni, Christian ^a   Mauri, Aurelio ^b   Amoroso, Salvatore Maria ^a   MacOni, Alessandro ^a   Greco, Eugenio ^b   Spinelli, Alessandro S ^a,c   Lacaita, Andrea L ^a,c  

^a POLITECNICO DI MILANO   (Italy)

^b R and D Technology Development   (Italy)

^c IFN CNR   (Italy)

Author keywords

Atomistic doping; nitride memories; semiconductor device modeling; SONOS memories; TANOS memories

Indexed keywords

ATOMISTIC DOPING; NITRIDE MEMORIES; SEMICONDUCTOR DEVICE MODELING; SONOS MEMORY; TANOS MEMORIES;

SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR SWITCHES; STATISTICS; TELEGRAPH; THRESHOLD VOLTAGE;

NITRIDES;

EID: 77956063356     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2010.2054491     Document Type: Article

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