Doping of III-nitride nanowires grown by molecular beam epitaxy

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 17, Issue 4, 2011, Pages 859-868

  Stoica, Toma ^a   Calarco, Raffaella ^a,b  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

Author keywords

Doping; nanotechnology; nitrogen compounds; semiconductor materials measurements

Indexed keywords

BULK CONCENTRATION; DOPING LEVELS; ELECTRICAL MEASUREMENT; ELECTRON CONCENTRATION; FREE CARRIER CONCENTRATION; III-NITRIDE; PHOTOLUMINESCENCE SPECTRUM; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; RAMAN MEASUREMENTS; SI (1 1 1); SI-DOPING; SURFACE ELECTRON ACCUMULATION; UNIFORM DIAMETER;

CARRIER CONCENTRATION; CARRIER MOBILITY; ELECTRIC PROPERTIES; ELECTRIC WIRE; EPITAXIAL GROWTH; FLUXES; GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MORPHOLOGY; NANOTECHNOLOGY; NANOWIRES; NITROGEN COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTOR MATERIALS; SILICON; WIRE;

SEMICONDUCTOR DOPING;

EID: 80051678713     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSTQE.2010.2092416     Document Type: Review

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