Doping concentration of GaN nanowires determined by opto-electrical measurements

Nano Letters

Volumn 8, Issue 9, 2008, Pages 3056-3059

  Richter, T ^a   Meijers, H Lüth R ^a   Calarco, R ^a   Marso, M ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM ALLOYS; GALLIUM NITRIDE; NANOWIRES; SEMICONDUCTING GALLIUM; TRANSPORT PROPERTIES;

DOPING CONCENTRATIONS; DOPING LEVELS; ELECTRICAL MEASUREMENTS; ELECTRICAL TRANSPORT PROPERTIES; ELECTRICAL TRANSPORTS; GAN NANOWIRES; N-DOPING; SIZE DEPENDENTS; SURFACE RECOMBINATIONS; WIRE DIAMETERS;

ELECTRIC WIRE;

GALLIUM; GALLIUM NITRIDE; NANOWIRE;

ARTICLE; CHEMISTRY; ELECTRONICS; OPTICS; SCANNING ELECTRON MICROSCOPY;

ELECTRONICS; GALLIUM; MICROSCOPY, ELECTRON, SCANNING; NANOWIRES; OPTICS;

EID: 54549085779     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl8014395     Document Type: Article

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