Investigation on localized states in GaN nanowires

ACS Nano

Volumn 2, Issue 2, 2008, Pages 287-292

  Polenta, Laura ^a   Rossi, M ^a   Cavallini, A ^a   Calarco, R ^b   Marso, M ^b   Meijers, R ^b   Richter, T ^b   Stoica, T ^b   Luth H ^a  

^a UNIVERSITY OF BOLOGNA   (Italy)

^b FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

Gallium nitride; Nanowires; Spectral photoconductivity; Yellow band

Indexed keywords

ELECTRIC CONDUCTIVITY; ENERGY GAP; GALLIUM NITRIDE; OPTOELECTRONIC DEVICES; PHOTOCONDUCTIVITY;

PHOTOINDUCED CURRENT; SUB-BAND-GAP OPTOELECTRONIC TRANSITIONS;

NANOWIRES;

GALLIUM; GALLIUM NITRIDE; NANOTUBE;

ARTICLE; CHEMISTRY; CONFORMATION; CRYSTALLIZATION; ELECTRIC CONDUCTIVITY; ELECTROCHEMISTRY; LIGHT; MACROMOLECULE; MATERIALS TESTING; METHODOLOGY; NANOTECHNOLOGY; PARTICLE SIZE; PHOTOCHEMISTRY; RADIATION EXPOSURE; SURFACE PROPERTY; ULTRASTRUCTURE;

CRYSTALLIZATION; ELECTRIC CONDUCTIVITY; ELECTROCHEMISTRY; GALLIUM; LIGHT; MACROMOLECULAR SUBSTANCES; MATERIALS TESTING; MOLECULAR CONFORMATION; NANOTECHNOLOGY; NANOTUBES; PARTICLE SIZE; PHOTOCHEMISTRY; SURFACE PROPERTIES;

EID: 42549128331     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn700386w     Document Type: Article

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