Optical properties of Si- and Mg-doped gallium nitride nanowires grown by plasma-assisted molecular beam epitaxy

Journal of Applied Physics

Volumn 104, Issue 7, 2008, Pages

  Furtmayr, Florian ^a   Vielemeyer, Martin ^a   Stutzmann, Martin ^a   Laufer, Andreas ^b   Meyer, Bruno K ^b   Eickhoff, Martin ^b  

^a WALTER SCHOTTKY INSTITUT   (Germany)

^b JUSTUS LIEBIG UNIVERSITY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CONCENTRATION (PROCESS); CRYSTAL GROWTH; ELECTRIC WIRE; EMISSION SPECTROSCOPY; FLUXES; GALLIUM ALLOYS; GALLIUM COMPOUNDS; GALLIUM NITRIDE; LIGHT EMISSION; LUMINESCENCE; MAGNESIUM PRINTING PLATES; MASS SPECTROMETRY; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOLECULAR DYNAMICS; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; NANOWIRES; NITRIDES; OPTICAL MATERIALS; OPTICAL PROPERTIES; PLASMAS; POINT DEFECTS; SECONDARY BATTERIES; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM WIRES; SILICON; ZINC SULFIDE;

BOUND EXCITON RECOMBINATIONS; CATALYST FREEST; DOPED MATERIALS; DOPED SAMPLES; DOPING; EDGE EMISSIONS; EMISSION BANDS; GALLIUM NITRIDE NANOWIRES; GAN NANOWIRES; GROWTH CONDITIONS; LUMINESCENCE PROPERTIES; MG CONCENTRATIONS; MOLECULAR-BEAM EPITAXIES; PHOTO-LUMINESCENCE; PL PROPERTIES; SECONDARY ION MASS SPECTROSCOPIES; SI(111); WURTZITE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 54049124108     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2980341     Document Type: Article

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