GaN nanowire carrier concentration calculated from light and dark resistance measurements

Journal of Electronic Materials

Volumn 38, Issue 4, 2009, Pages 495-504

  Mansfield, L M ^a   Bertness, K A ^a   Blanchard, P T ^a   Harvey, T E ^a   Sanders, A W ^a   Sanford, N A ^a  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

FETs; Field effect transistors; Gallium nitride; Mobility; Nanostructures

Indexed keywords

CURRENT-VOLTAGE MEASUREMENTS; CYLINDRICAL GEOMETRIES; FETS; FIELD EMISSION-SCANNING ELECTRON MICROSCOPIES; GALLIUM NITRIDE NANOWIRES; GAN NANOWIRES; MOBILITY; NANOWIRE DEVICES; NON-LINEAR FITS; RESISTANCE MEASUREMENTS; ROOM TEMPERATURES;

BIOACTIVITY; CARRIER CONCENTRATION; ELECTRIC WIRE; FIELD EFFECT TRANSISTORS; GALLIUM ALLOYS; GALLIUM NITRIDE; MESFET DEVICES; NANOWIRES; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM;

CARRIER MOBILITY;

EID: 61849180894     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-009-0672-z     Document Type: Conference Paper

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