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Volumn 91, Issue 25, 2007, Pages

From nucleation to growth of catalyst-free GaN nanowires on thin AlN buffer layer

Author keywords

[No Author keywords available]

Indexed keywords

BUFFER LAYERS; CATALYST ACTIVITY; GALLIUM NITRIDE; GROWTH TEMPERATURE; NUCLEATION; SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 37549053623     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2817941     Document Type: Article
Times cited : (221)

References (15)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.