Unpinning the Fermi level of GaN nanowires by ultraviolet radiation

Physical Review B - Condensed Matter and Materials Physics

Volumn 82, Issue 4, 2010, Pages

  Pfüller, Carsten ^a   Brandt, Oliver ^a   Grosse, Frank ^a   Flissikowski, Timur ^a   Chèze, Caroline ^a   Consonni, Vincent ^a   Geelhaar, Lutz ^a   Grahn, Holger T ^a   Riechert, Henning ^a  

^a PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 77956653831     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.82.045320     Document Type: Article

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33. According to this interpretation, the (U,X) experiences an even stronger electric field than the (D 0, X) due to the surface band bending. Furthermore, surface donors exhibit a lower exciton binding energy than bulklike donors (Ref.). Both of these facts should to second order even result in a stronger increase for the (U,X) line compared to the (D 0, X) transition (Ref.) contrary to what is observed experimentally.