Acoustic charge transport in GaN nanowires

Nanotechnology

Volumn 19, Issue 27, 2008, Pages

  Ebbecke, J ^a,b   Maisch, S ^a   Wixforth, A ^a   Calarco, R ^c   Meijers, R ^c   Marso, M ^c   Luth H ^c  

^a UNIVERSITY OF AUGSBURG   (Germany)

^b HERIOT WATT UNIVERSITY   (United Kingdom)

^c FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ACOUSTIC SURFACE WAVE DEVICES; ACOUSTIC WAVE VELOCITY; ACOUSTIC WAVES; ACOUSTICS; CRYSTAL GROWTH; ELECTRIC WIRE; EPITAXIAL GROWTH; GALLIUM NITRIDE; LITHOGRAPHY; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOLECULAR DYNAMICS; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; NANOWIRES; NONMETALS; SEMICONDUCTING GALLIUM; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SUBSTRATES;

ACOUSTIC CHARGE TRANSPORT (ACT); GALLIUM NITRIDE (GAN) NANOWIRES; MOLECULAR BEAM EPITAXY (MBE); SILICON (111) SUBSTRATES; SURFACE ACOUSTIC WAVES (SAW);

GALLIUM ALLOYS;

NANOMATERIAL; NANOWIRE; SILICON;

ARTICLE; ELECTRIC CURRENT; ELECTRON BEAM; ELECTRON TRANSPORT; PIEZOELECTRICITY; POWER ANALYSIS; PRIORITY JOURNAL; RADIOFREQUENCY; WAVEFORM;

EID: 48249111418     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/19/27/275708     Document Type: Article

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