Optical and structural study of GaN nanowires grown by catalyst-free molecular beam epitaxy. I. Near-band-edge luminescence and strain effects

Journal of Applied Physics

Volumn 101, Issue 11, 2007, Pages

  Robins, Lawrence H ^a   Bertness, Kris A ^a   Barker, Joy M ^a   Sanford, Norman A ^a   Schlager, John B ^a  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODOLUMINESCENCE; CRYSTAL GROWTH; GALLIUM NITRIDE; LATTICE CONSTANTS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE SPECTROSCOPY; STARK EFFECT; X RAY DIFFRACTION; CHARGE INJECTION; ELECTRON IRRADIATION; ENERGY GAP; EXCITONS; QUENCHING; THERMAL CYCLING;

FACETED MATRIX LAYERS; FREE-EXCITON LINES; QUASISUBSTRATES; STARK EFFECT BROADENING; ELECTRON IRRADIATION EFFECTS; IRRADIATION DOSE; STRUCTURAL DEFECTS;

NANOWIRES;

EID: 34250671635     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2736264     Document Type: Article

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