Defect distribution along single GaN nanowhiskers

Nano Letters

Volumn 6, Issue 7, 2006, Pages 1548-1551

  Cavallini, Anna ^a   Polenta, Laura ^a   Rossi, Marco ^a   Richter, Thomas ^b   Marso, Michel ^b   Meijers, Ralph ^b   Calarco, Raffaella ^b   Lüth, Hans ^b  

^a UNIVERSITY OF BOLOGNA   (Italy)

^b FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECTS; ELECTRON TRANSITIONS; GALLIUM NITRIDE; GROWTH (MATERIALS); MOLECULAR BEAM EPITAXY; PHOTOCONDUCTIVITY; PHOTOCURRENTS;

BAND-GAP RELATED TRANSITION; COLUMN GROWTH DIRECTION; NANOWHISKERS; SPATIAL LOCALIZATION;

NANOSTRUCTURED MATERIALS;

GALLIUM; GALLIUM NITRIDE; NANOMATERIAL;

ARTICLE; CHEMISTRY; ELECTRIC CONDUCTIVITY; LUMINESCENCE; PHOTOCHEMISTRY;

ELECTRIC CONDUCTIVITY; GALLIUM; LUMINESCENCE; NANOSTRUCTURES; PHOTOCHEMISTRY;

EID: 33746930224     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl060332n     Document Type: Article

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