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Applied Physics A: Materials Science and Processing

Volumn 87, Issue 3, 2007, Pages 499-503

GaN and InN nanowires grown by MBE: A comparison

(2) Calarco, R a Marso, M a

a FORSCHUNGSZENTRUM JÜLICH (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; FERMI LEVEL; GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; MORPHOLOGY; OPTICAL PROPERTIES; SEMICONDUCTING INDIUM COMPOUNDS; TRANSPORT PROPERTIES;

BAND SCHEMA; CRYSTALLINE QUALITY; FERMI LEVEL PINNING; GROWTH PARAMETERS;

NANOWIRES;

EID: 33947231603 PISSN: 09478396 EISSN: 14320630 Source Type: Journal
DOI: 10.1007/s00339-007-3871-6 Document Type: Article

Times cited : (51)

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