Nucleation and growth of GaN nanorods on Si (111) surfaces by plasma-assisted molecular beam epitaxy - The influence of Si- and Mg-doping

Journal of Applied Physics

Volumn 104, Issue 3, 2008, Pages

  Furtmayr, Florian ^a   Vielemeyer, Martin ^a   Stutzmann, Martin ^a   Arbiol, Jordi ^b   Estrad́, Snia ^b   Peir, Francesca ^b   Morante, Joan Ramon ^b   Eickhoff, Martin ^a  

^a WALTER SCHOTTKY INSTITUT   (Germany)

^b UNIVERSITY OF BARCELONA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; CRYSTAL GROWTH; ECOLOGY; EPITAXIAL GROWTH; GALLIUM NITRIDE; MAGNESIUM PRINTING PLATES; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOLECULAR DYNAMICS; NANORODS; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; NITRIDES; NITROGEN; NONMETALS; NUCLEATION; PLASMAS; PULSED LASER DEPOSITION; SEMICONDUCTING GALLIUM; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR QUANTUM WIRES; SILICON; SILICON NITRIDE; SUBSTRATES;

ADATOM DIFFUSION; AMORPHOUS SILICON NITRIDES; AXIAL GROWTH; GROWTH CONDITIONS; INITIAL STAGES; MG CONCENTRATIONS; MG-DOPING; NON-POLAR; NUCLEATION AND GROWTH; PLASMA ASSISTED MOLECULAR-BEAM EPITAXY; RADIAL-GROWTH; RICH CONDITIONS; SELF-ASSEMBLED GROWTH; SI SUBSTRATES; SI(111); SUBSTRATE TEMPERATURE; WETTING LAYER;

GALLIUM ALLOYS;

EID: 49749105269     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2953087     Document Type: Article

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