Characteristics of dielectrophoretically aligned UV-blue GaN nanowire LEDs

Journal of Nanoscience and Nanotechnology

Volumn 8, Issue 1, 2008, Pages 268-273

  Kim, Tae Hong ^a   Lee, Seung Yong ^a   Kim, Hyung Gu ^a   Kim, Sang Hoon ^a   Hong, Chang Hee ^a   Hahn, Yoon Bong ^a   Lee, Sang Kwon ^a  

^a Chonbuk National University   (South Korea)

Author keywords

Dielectrophoresis; Gallium nitrides nanowires; Light emitting diodes; Ultra Violet Light Emitting Diodes (UV LEDs)

Indexed keywords

ELECTRIC PROPERTIES; ELECTRIC RESISTANCE; ELECTROPHORESIS; GALLIUM NITRIDE; LEAKAGE CURRENTS; OPTICAL PROPERTIES; SILICA;

DIELECTROPHORESIS ASSISTED ASSEMBLY DEPOSITION (DAAD); GALLIUM NITRIDES NANOWIRES; ULTRA-VIOLET LIGHT-EMITTING DIODES (UV-LEDS);

LIGHT EMITTING DIODES;

EID: 42649114095     PISSN: 15334880     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (14)