Properties of GaN and related compounds studied by means of Raman scattering

Journal of Physics Condensed Matter

Volumn 14, Issue 38, 2002, Pages

  Harima, Hiroshi ^a  

^a KYOTO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM NITRIDE; CRYSTAL DEFECTS; CRYSTAL IMPURITIES; INDIUM COMPOUNDS; LATTICE VIBRATIONS; MAGNETIC SEMICONDUCTORS; PHONONS; RAMAN SCATTERING; SEMICONDUCTOR QUANTUM DOTS; SUPERLATTICES; THERMAL EFFECTS; TRANSPORT PROPERTIES;

ALUMINUM GALLIUM NITRIDE; BINARY COMPOUNDS; FREE CARRIERS; INDIUM GALLIUM NITRIDE; INDIUM NITRIDE; LATTICE PROPERTIES; STRESS EFFECT; TERNARY ALLOYS;

GALLIUM NITRIDE;

EID: 0037200746     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/14/38/201     Document Type: Review

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