Conduction mechanisms and reliability of thermal Ta 2O 5-Si structures and the effect of the gate electrode

Journal of Applied Physics

Volumn 97, Issue 9, 2005, Pages

  Atanassova, E ^a   Paskaleva, A ^a   Novkovski, N ^b   Georgieva, M ^a  

^a INSTITUTE OF SOLID STATE PHYSICS   (Bulgaria)

^b SS CYRIL AND METHODIUS UNIVERSITY   (Macedonia)

Author keywords

[No Author keywords available]

Indexed keywords

BREAKDOWN FIELDS; ELECTRICAL STRESSES; GATE DEPOSITION-INDUCED EFFECTS; METAL GATE ELECTRODES;

CAPACITANCE; CAPACITORS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRODES; LEAKAGE CURRENTS; OXIDATION; PERMITTIVITY; TANTALUM COMPOUNDS; THIN FILMS;

SEMICONDUCTOR DEVICE STRUCTURES;

EID: 18844383701     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1884758     Document Type: Article

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