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Applied Physics A: Materials Science and Processing

Volumn 81, Issue 4, 2005, Pages 767-771

Temperature accelerated dielectric breakdown of PECVD low-k carbon doped silicon dioxide dielectric thin films

(4) Zhou, H a Shi, F G a Zhao, B b Yota, J b

a University of California at Irvine (United States)

b SKYWORKS SOLUTIONS INC (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CARBON; DOPING (ADDITIVES); ELECTRIC BREAKDOWN; ELECTRIC CONDUCTIVITY; ELECTRON TRAPS; ELECTRON TUNNELING; PERMITTIVITY; SILICA; THIN FILMS;

DIELECTRIC BREAKDOWN; DIELECTRIC BREAKDOWN STRENGTH; DIELECTRIC THIN FILMS; METAL-INSULATOR-SEMICONDUCTOR (MIS) STRUCTURES;

DIELECTRIC FILMS;

EID: 22044458209 PISSN: 09478396 EISSN: None Source Type: Journal
DOI: 10.1007/s00339-004-2715-x Document Type: Article

Times cited : (16)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.