In situ electrical characterization of the thickness dependence of organic field-effect transistors with 1-20 molecular monolayer of pentacene

ACS Applied Materials and Interfaces

Volumn 2, Issue 8, 2010, Pages 2282-2288

  Liu, Shun Wei ^a   Lee, Chih Chien ^b   Tai, Hung Lin ^b   Wen, Je Min ^b   Lee, Jiun Haw ^c   Chen, Chin Ti ^a  

^a INSTITUTE OF CHEMISTRY   (Taiwan)

^b NATIONAL TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

^c NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

field effect transistors; in situ measurement; molecular monolayer; pentacene; thickness dependence

Indexed keywords

AFM IMAGE; DOMAIN SIZE; ELECTRICAL CHARACTERISTIC; ELECTRICAL CHARACTERIZATION; FIELD-EFFECT MOBILITIES; GROWTH MECHANISMS; IN-SITU; IN-SITU MEASUREMENT; MOLECULAR LAYER; MOLECULAR MONOLAYER; ON/OFF CURRENT RATIO; PACKING STRUCTURE; PENTACENE FET; PENTACENE LAYERS; PENTACENE THICKNESS; PENTACENE THIN FILMS; PENTACENES; REPRODUCIBILITIES; SATURATION THICKNESS; STACKING STRUCTURES; STRANSKI-KRASTANOV MODE; SURFACE COVERAGES; THICKNESS DEPENDENCE; VARIABLE THICKNESS;

ATOMIC FORCE MICROSCOPY; CARRIER MOBILITY; DRAIN CURRENT; FILM GROWTH; LANDFORMS; MONOLAYERS; ORGANIC FIELD EFFECT TRANSISTORS; SEMICONDUCTOR GROWTH; SILICON COMPOUNDS; SOIL CONSERVATION;

FIELD EFFECT TRANSISTORS;

EID: 79151477915     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/am1003377     Document Type: Article

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