Direct observation of contact and channel resistance in pentacene four-terminal thin-film transistor patterned by laser ablation method

Applied Physics Letters

Volumn 84, Issue 5, 2004, Pages 813-815

  Yagi, Iwao ^a,b   Tsukagoshi, Kazuhito ^a   Aoyagi, Yoshinobu ^a,b  

^a RIKEN   (Japan)

^b TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CARRIER MOBILITY; CURRENT VOLTAGE CHARACTERISTICS; DRY ETCHING; ELECTRIC CONTACTS; ELECTRIC CURRENT MEASUREMENT; ELECTRIC RESISTANCE; GATES (TRANSISTOR); LASER ABLATION; LASER PULSES; SILICA; THERMAL EFFECTS; VOLTAGE MEASUREMENT;

CHANNEL RESISTANCE; PATTERNING PROCESSES; TFTS;

THIN FILM TRANSISTORS;

EID: 1242264008     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1645316     Document Type: Article

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