Contact resistance instability in pentacene thin film transistors induced by ambient gases

Applied Physics Letters

Volumn 94, Issue 8, 2009, Pages

  Wang, S D ^a,b   Minari, T ^b,c,d   Miyadera, T ^b,c   Tsukagoshi, K ^b,c,e   Tang, J X ^a  

^a SOOCHOW UNIVERSITY   (China)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^d RIKEN   (Japan)

^e NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

OXYGEN; SEMICONDUCTING ORGANIC COMPOUNDS; THIN FILM TRANSISTORS; THIN FILMS; TRANSPORT PROPERTIES;

ADSORPTION/DESORPTION; AMBIENT GAS; CHARGE TRANSPORT PROPERTIES; CHARGE TRAP STATE; CONDUCTIVITY CHANGES; CONTACT REGIONS; CURRENT INJECTIONS; PENTACENE THIN FILM TRANSISTORS;

CONTACT RESISTANCE;

EID: 61349157979     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3089246     Document Type: Article

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