Channel formation in organic field-effect transistors

Journal of Applied Physics

Volumn 91, Issue 7, 2002, Pages 4312-4318

  Li, T ^a   Balk, J W ^a   Ruden, P P ^a   Campbell, I H ^b   Smith, D L ^b  

^a University of Minnesota   (United States)

^b LOS ALAMOS NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BOTTOM-CONTACT; CHANNEL CARRIER DENSITY; CHANNEL FORMATION; CONDUCTIVE CHANNELS; DEVICE STRUCTURES; ELECTROSTATIC MODELING; GATE BIAS; GATE CONTACT; HIGH-WORK-FUNCTION METAL; INDUCED CHARGES; METAL SOURCE AND DRAIN; P-TYPE; SOURCE AND DRAIN ELECTRODES; SOURCE AND DRAINS; SPATIAL VARIATIONS;

ELECTRIC CONTACTS; MAGNESIUM; ORGANIC FIELD EFFECT TRANSISTORS; WORK FUNCTION;

METALS;

EID: 0036537433     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1453509     Document Type: Article

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