Morphological Origin of High Mobility in Pentacene Thin-Film Transistors

Chemistry of Materials

Volumn 8, Issue 11, 1996, Pages 2542-2544

  Laquindanum, Joyce G ^a   Katz, Howard E ^a   Lovinger, Andrew J ^a   Dodabalapur, Ananth ^a  

^a LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0542381237     PISSN: 08974756     EISSN: None     Source Type: Journal    
DOI: 10.1021/cm9603664     Document Type: Article

References (27)

1. (a) Fichou, D.; Horowitz, G.; Nishikatani, Y.; Roncali, J.; Gamier, F. Synth. Met. 1989, 28, C729.
2. (b) de Leeuw, D. M.; Lous, E. J. Synth. Met. 1994, 65, 45.
3. (a) Horowitz, G.; Fichou, D.; Peng, X.; Gamier, F. Solid State Commun. 1989, 72, 381.
4. (b) Tsumura, A.; Koezuka, H.; Ando, K. Appl. Phys. Lett. 1986, 49, 1210.
5. (c) Assadi, A.; Svensson, C.; Willander, M.; Ingannas, O. Appl. Phys. Lett. 1988, 53, 195.
6. (d) Fuchigami, H.; Tsumura, A.; Koezuka, H. Appl. Phys. Lett. 1993, 63, 1372.
7. (e) Paloheimo, J.; Kuivalainen, P.; Stubb, H.; Vuorimaa, E.; Yli-Lahti, P. Appl. Phys. Lett. 1990, 56, 1157.
8. Horowitz, G.; Fichou, D.; Peng, X.; Garnier, F. Synth. Met. 1991, 41-43, 1127.
9. Katz, H. E.; Torsi, L.; Dodabalapur, A. Chem. Mater. 1995, 7, 2235.
10. Servet, B.; Horowitz, G.; Ries, S.; Lagorsse, O.; Alnot, P.; Deloffre, F.; Srivastava, P.; Hajlaoui, R.; Lang, F.; Garnier, F. Chem. Mater. 1994, 6, 1809.
11. (a) Garnier, F.; Peng, F. Z.; Horowitz, G.; Fichou, D. Adv. Mater. 1990, 2, 592.
12. (b) Peng, X.; Horowitz, G.; Fichou, D.; Garnier, F. Appl. Phys. Lett. 1990, 57, 2013.
13. (c) Dodabalapur, A.; Katz, H. E.; Torsi, L.; Haddon, R. C. Science 1995, 269, 1560.
14. (d) Torsi, L.; Dodabalapur, A.; Katz, H. E. J. Appl. Phys. 1995, 78, 1088.
15. (e) Torsi, L.; Dodabalapur, A.; Rothberg, L. J.; Fung, A. W. P.; Katz, H. E. Science 1996, 272, 1462.
16. (a) Brown, A. R.; Pomp, A.; de Leeuw, D. M.; Klaasen, D. B. M.; Havinga, E. E.; Herwig, P.; Mullen, K. J. Appl. Phys. 1996, 79, 2136.
17. (b) Brown, A. R.; Pomp, A.; Hart, C. M.; de Leeuw, D. M. Science 1995, 270, 972.
18. Dimitrakopoulos, C. D.; Brown, A. R.; Pomp, A. J. Appl. Phys. 1996, 80, 2501.
19. Lin, Y. Y.; Gundlach, D. J.; Jackson, T. N. 54Th Annual Device Research Conference Digest 1996, 80. See also: Science 1996, 273, 879.
20. Lin, Y. Y.; Gundlach, D. J.; Jackson, T. N. 54Th Annual Device Research Conference Digest 1996, 80. See also: Science 1996, 273, 879.
21. Minakata, T.; Imai, H.; Ozaki, M.; Saco, K. J. Appl. Phys. 1992, 72, 5220.
22. Dodabalapur, A.; Torsi, L.; Katz, H. E. Science 1995, 268, 270-271.
23. Sze, S. M. Physics of Semiconductor Devices; Wiley: New York, 1981.
24. Warta, W.; Stehle, R.; Karl, N. Appl. Phys. 1985, A36, 163.
25. Gamier, F.; Yassar, A.; Hajlaoui, R.; Horowitz, G.; Deloffre, F.; Servet, B.; Ries, S.; Alnot, P. J. Am. Chem. Soc. 1993, 115, 8716.
26. Torsi, L.; Dodabalapur, A.; Lovinger, A. J.; Katz, H. E.; Ruel, R.; Davis, D. D.; Baldwin, K. W. Chem. Mater. 1995, 7, 2247.
27. Bao, Z.; Lovinger, A.; Dodabalapur, A. Appl. Phys. Lett., in press.