Spatially Correlated Charge Transport in Organic Thin Film Transistors

Physical Review Letters

Volumn 92, Issue 11, 2004, Pages

  Dinelli, Franco ^a   Murgia, Mauro ^a   Levy, Pablo ^a,c   Cavallini, Massimiliano ^a   Biscarini, Fabio ^a   De Leeuw, Dago M ^b  

^a CNR   (Italy)

^b PHILIPS RESEARCH LABORATORIES   (Netherlands)

^c CENTRO ATÓMICO CONSTITUYENTES   (Argentina)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CARRIER MOBILITY; CHARGE CARRIERS; CORRELATION METHODS; DIELECTRIC PROPERTIES; MOLECULAR ORIENTATION; MONOLAYERS; PERCOLATION (SOLID STATE); SINGLE CRYSTALS; ULTRATHIN FILMS;

ACCUMULATION LAYERS; CHARGE TRANSPORT; ORGANIC FIELD EFFECT TRANSISTORS; THIN FILM TRANSISTORS (TFT);

FIELD EFFECT TRANSISTORS;

EID: 2342574893     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevLett.92.116802     Document Type: Article

References (30)

1. A. Tsumura, H. Koezuka, and T. Ando, Appl. Phys. Lett. 49, 1210 (1986).
2. G. Horowitz et al., Solid State Commun. 72, 381 (1989).
3. P. Ostoja et al., Synth. Met. 54, 447 (1993).
4. (a) C. D. Dimitrakopoulos and D. J. Mascaro, IBM J. Res. Dev. 45, 11 (2001);
5. (b) D. Fichou, Handbook of Oligo- and Polythiophenes (Academic, New York, 1998), p. 271.
6. S. F. Nelson et al., Appl. Phys. Lett. 72, 1854 (1998).
7. N. Karl, in Organic Electronic Materials Conjugated Polymers and Low Molecular Weight Organic Solids, edited by R. Farchioni and G. Grosso, Springer Series in Materials Science Vol. 41 (Springer-Verlag, Berlin, 2000), p. 283.
8. M. Pope and C. E. Swenberg, Electronic Processes in Organic Crystals and Polymers (Oxford University Press, New York, 1999), 2nd ed., p. 337-340.
9. H. Bässler, Phys. Status Solidi B 175, 15 (1993).
10. M. C. J. M. Vissenberg and M. Matters, Phys. Rev. B 57, 964 (1998).
11. S. V. Novikov et al., Phys. Rev. Lett. 81, 4472 (1998).
12. G. Horowitz et al., Adv. Mater. 10, 923 (1998).
13. G. Horowitz, R. Hajlaoui, and F. Kouki, Eur. Phys. J. Appl. Phys. 1, 361 (1998).
14. (a) A. Dodalabapur, L. Torsi, and H. E. Katz, Science 268, 270 (1995);
15. (b) H. G. O. Sandberg et al., Langmuir 18, 10 176 (2002).
16. E. L. Granstrom and C. D. Frisbie, J. Phys. Chem. B 103, 8842 (1999).
17. F. Biscarini et al., Phys. Rev. B 52, 14868 (1995).
18. M. Muccini et al., Adv. Mater. 13, 355 (2001).
19. A.-L. Barabàsi and H. E. Stanley, Fractal Concepts in Surface Growth (Cambridge University Press, Cambridge, England, 1995).
20. F. Biscarini et al., Phys. Rev. Lett. 78, 2389 (1997).
21. i and Θ. The right side approximation holds for Δh = 2.4 ± 0.3 nm, which is the thickness of a sexithienyl monolayer measured by AFM.
22. E. J. Meijer et al., Appl. Phys. Lett. 82, 4576 (2003).
23. lin data.
24. G. Horowitz, M. E. Hajlaoui, and R. Hajlaoui, J. Appl. Phys. 87, 4456 (2000).
25. W. Porzio, S. Destri, M. Mascherpa, and S. Bruckner, Acta Polym. 44, 266 (1993).
26. G. Horowitz et al., Chem. Mater. 7, 1337 (1995).
27. M. C. Bartelt and J. W. Evans, Phys. Rev. Lett. 75, 4250 (1995).
28. B. I. Shklovskii and A. L. Efros, Electronic Properties of Doped Semiconductors (Springer-Verlag, Berlin, 1984).
29. -1.
30. G. Horowitz (private communication).