Analysis of carrier transport in quaterrylene thin film transistors formed by ultraslow vacuum deposition

Journal of Applied Physics

Volumn 104, Issue 2, 2008, Pages

  Hayakawa, Ryoma ^a   Petit, Matthieu ^a   Chikyow, Toyohiro ^a   Wakayama, Yutaka ^a,b  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^b Japan Science and Technology Agency   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

SILICON COMPOUNDS; THICK FILMS; THIN FILM DEVICES; THIN FILM TRANSISTORS; TRANSISTORS; VACUUM DEPOSITION;

AU ELECTRODES; QUATERRYLENE;

FIELD EFFECT TRANSISTORS;

EID: 48849099995     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2956696     Document Type: Article

References (20)

1. C. D. Dimitrakopoulos and P. R. L. Malenfant, Adv. Mater. (Weinheim, Ger.) 14, 99 (2002).
2. G. Horowitz, Adv. Mater. (Weinheim, Ger.) 10, 365 (1998).
3. G. Witte and C. Woll, J. Mater. Res. 19, 1889 (2004).
4. V. Podzorov, E. Menard, A. Borissov, V. Kiryukhin, J. A. Rogers, and M. E. Gershenson, Phys. Rev. Lett. 93, 086602 (2004).
5. V. C. Sundar, J. Zaumseil, V. Podzprov, E. Menard, R. L. Willen, T. Someya, M. E. Gershenson, and J. A. Rogers, Science 303, 1644 (2004).
6. C. R. Newman, R. J. Chesterfield, J. A. Merlo, and C. D. Frisbie, Appl. Phys. Lett. 85, 422 (2004).
7. J. Takeya, C. Goldmann, S. Haas, K. P. Pernstich, B. Ketterer, and B. Batlogg, J. Appl. Phys. 94, 5800 (2003).
8. T. W. Kelley, P. F. Baude, C. Gerlanch, D. E. Ender, D. Muyres, M. A. Haase, D. E. Voge, and S. D. Theiss, Chem. Mater. 16, 4413 (2004).
9. V. Podzorov, S. E. Sysoev, E. Loginova, V. M. Pudalov, and M. E. Gershenson, Appl. Phys. Lett. 83, 3504 (2003).
10. H. Sirringhaus, R. H. Friend, X. C. Li, S. C. Moratti, A. B. Holmes, and N. Feeder, Appl. Phys. Lett. 71, 3871 (1997).
11. D. Knipp, R. A. Street, B. Krusor, R. Apte, and J. Ho, J. Non-Cryst. Solids 299, 1042 (2002).
12. T. Maeda, T. Kobayashi, T. Nemot, and S. Isoda, Philos. Mag. B 81, 1659 (2001).
13. J. P. Luis, A. Minoia, H. Ujii, C. Rovira, J. Cornil, S. D. Feyter, R. Lazzaroni, and D. B. Amabilino, J. Am. Chem. Soc. 128, 12602 (2006).
14. R. Hayakawa, M. Petit, Y. Wakayama, and T. Chikyow, J. Phys. A: Math. Theor. 111, 18703 (2007).
15. R. Hayakawa, M. Petit, Y. Wakayama, and T. Chikyow, Org. Electron. 8, 631 (2007).
16. H. Sasaki, Y. Wakayama, T. Chikyow, E. Barrena, H. Dosh, and K. Kobayashi, Appl. Phys. Lett. 88, 081907 (2006).
17. G. Horowitz and M. E. Hajlaoui, Synth. Met. 122, 185 (2001).
18. F. Dinelli, M. Murgia, P. Levy, M. Cavallini, F. Biscarini, and D. M. De Leeuw, Phys. Rev. Lett. 92, 116802 (2004).
19. M. Kiguchi, M. Nakayama, K. Fujiwara, K. Ueno, T. Shimada, and K. Saiki, Jpn. J. Appl. Phys., Part 2 42, L1408 (2003).
20. D. Guo, T. Miyadera, S. Ileda, T. Shimada, and K. Saiki, J. Appl. Phys. 102, 023706 (2007).