Variable temperature film and contact resistance measurements on operating n-channel organic thin film transistors

Journal of Applied Physics

Volumn 95, Issue 11 I, 2004, Pages 6396-6405

  Chesterfield, Reid J ^a   McKeen, John C ^a   Newman, Christopher R ^a   Frisbie, C Daniel ^a   Ewbank, Paul C ^a   Mann, Kent R ^a   Miller, Larry L ^a  

^a UNIVERSITY OF MINNESOTA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONTACT RESISTANCE; GATE BIAS STRESS; ORGANIC THIN FILM TRANSISTORS (OTFT); THRESHOLD VOLTAGE SHIFT (TVS);

ACTIVATION ENERGY; ATOMIC FORCE MICROSCOPY; CARRIER MOBILITY; CRYSTAL STRUCTURE; DISSOCIATION; EXTRAPOLATION; FILM GROWTH; SEMICONDUCTING ORGANIC COMPOUNDS; SINGLE CRYSTALS; STRESSES; THRESHOLD VOLTAGE; X RAY DIFFRACTION ANALYSIS;

THIN FILM TRANSISTORS;

EID: 2942668437     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1710729     Document Type: Article

References (44)

1. T. N. Jackson, Y.-Y. Lin, D. J. Gundlach, and H. Klauk, IEEE J. Sel. Top. Quantum Electron. 4, 100 (1998).
2. D. Knipp, R. A. Street, A. Volkel, and J. Ho, J. Appl. Phys. 93, 347 (2003).
3. P. F. Baude, D. A. Ender, M. A. Haase, T. W. Kelley, D. V. Muyres, and S. D. Theiss, Appl. Phys. Lett. 82, 3964 (2003).
4. V. Y. Butko, X. Chi, D. V. Lang, and A. P. Ramirez, Appl. Phys. Lett. 83, 4773 (2003).
5. V. Podzorov, V. M. Pudalov, and M. E. Gershenson, Appl. Phys. Lett. 82, 1739 (2003).
6. N. Karl, J. Cryst. Growth 99, 1009 (1990).
7. R. J. Chesterfield, C. R. Newman, T. M. Pappenfus, P. C. Ewbank, M. H. Haukaas, K. R. Mann, L. L. Miller, and C. D. Frisbie, Adv. Mater. (Weinheim, Ger.) 15, 1278 (2003).
8. H. E. Katz, J. Johnson, A. J. Lovinger, and W. Li, J. Am. Chem. Soc. 122, 7787 (2000).
9. Z. Bao, A. J. Lovinger, and J. Brown, J. Am. Chem. Soc. 120, 207 (1998).
10. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1981).
11. P. V. Necliudov, M. S. Shur, D. J. Gundlach, and T. N. Jackson, Solid-State Electron. 47, 259 (2002).
12. R. A. Street and A. Salleo, Appl. Phys. Lett. 81, 2887 (2002).
13. J. A. Merlo and C. D. Frisbie, J. Polym. Sci., Part B: Polym. Phys. 41, 2674 (2003).
14. C.-Y. Chen and J. Kanicki, IEEE Electron Device Lett. 18, 340 (1997).
15. M. J. Powell, C. Van Berkel, A. R. Franklin, S. C. Deane, and W. I. Milne, Phys. Rev. B 45, 4160 (1992).
16. R. B. Wehrspohn, S. C. Deane, I. D. French, and M. J. Powell, J. Non-Cryst. Solids 266-269, 459 (2000).
17. A. R. Hepburn, C. Main, J. M. Marshall, C. Van Berkel, and M. J. Powell, J. Non-Cryst. Solids 9798, 903 (1987).
18. W. B. Jackson, M. D. Moyer, C. C. Tsai, and J. Marshall, J. Non-Cryst. Solids 9798, 891 (1987).
19. P. R. L. Malenfant, C. D. Dimitrakopoulos, J. D. Gelorme, L. L. Kosbar, T. O. Graham, A. Curioni, and W. Andreoni, Appl. Phys. Lett. 80, 2517 (2002).
20. F. Graser and E. Haedicke, Liebigs Ann. Chem. 12, 1994 (1980).
21. C. Kloc, P. G. Simpkins, T. Siegrist, and R. A. Laudise, J. Cryst. Growth 182, 416 (1997).
22. T. W. Kelley, D. V. Muyres, M. J. Pellerite, T. D. Dunbar, L. D. Boardman, and T. P. Smith, in U.S. [(3M Innovative Properties Company, USA)., Us, 2002], p. 11.
23. E. Haedicke and F. Graser, Acta Crystallogr., Sect. C: Cryst. Struct. Commun. C42, 189 (1986).
24. R. A. Cormier and B. A. Gregg, J. Phys. Chem. B 101, 11004 (1997).
25. C. W. Struijk, A. B. Sieval, J. E. J. Dakhorst, M. van Dijk, P. Kimkes, R. B. M. Koehorst, H. Donker, T. J. Schaafsma, S. J. Picken, A. M. van de Craats, J. M. Warman, H. Zuilhof, and E. J. R. Sudholter, J. Am. Chem. Soc. 122, 11057 (2000).
26. D. J. Gundlach, T. N. Jackson, D. G. Schlom, and S. F. Nelson, Appl. Phys. Lett. 74, 3302 (1999).
27. M. Lefenfeld, G. Blanchet, and J. A. Rogers, Adv, Mater. (Weinheim, Ger.) 15, 1188 (2003).
28. J. Zaumseil, K. W. Baldwin, and J. A. Rogers, J. Appl. Phys. 93, 6117 (2003).
29. H. Klauk, G. Schmid, W. Radlik, W. Weber, L. Zhou, C. D. Sheraw, J. A. Nichols, and T. N. Jackson, Solid-State Electron. 47, 297 (2002).
30. C.-S. Chiang, C.-Y. Chen, J. Kanicki, and K. Takechi, Appl. Phys. Lett. 72, 2874 (1998).
31. G. Horowitz, M. E. Hajlaoui, and R. Hajlaoui, J. Appl. Phys. 87, 4456 (2000).
32. S. F. Nelson, Y. Y. Lin, D. J. Gundlach, and T. N. Jackson, Appl. Phys. Lett. 72, 1854 (1998).
33. D. Knipp, R. A. Street, and A. R. Volkel, Appl. Phys. Lett. 82, 3907 (2003).
34. E. J. Meijer, M. Matters, P. T. Herwig, D. M. de Leeuw, and T. M. Klapwijk, Appl. Phys. Lett. 76, 3433 (2000).
35. G. Horowitz and M. E. Hajlaoui, Adv. Mater. (Weinheim, Ger.) 12, 1046 (2000).
36. J. Kanicki, Amorphous and Microcrystalline Semiconductor Devices, Materials and Device Physics, (Artech House, Inc., Norwood, 1992), Vol. 2.
37. H. Sirringhaus, P. J. Brown, R. H. Friend, M. M. Nielsen, K. Bechgaard, B. M. W. Langeveld-Voss, A. J. H. Spiering, R. A. J. Janssen, E. W. Meijer, P. Herwig, and D. M. De Leeuw, Nature (London) 401, 685 (1999).
38. I. Kymissis, C. D. Dimitrakopoulos, and S. Purushothaman, Trans. Electron Devices 48, 1060 (2001).
39. M. J. Powell, C. Van Berkel, and J. R. Hughes, Appl. Phys. Lett. 54, 1323 (1989).
40. M. Matters, D. M. De Leeuw, P. T. Herwig, and A. R. Brown, Synth. Met. 102, 998 (1999).
41. J. Laubender, L. Chkoda, M. Sokoloski, and E. Umbach, Synth. Met. 111-112, 373 (2000).
42. Z. Bao, Adv. Mater. (Weinheim, Ger.) 12, 227 (2000).
43. H. E. Katz, A. J. Lovinger, J. Johnson, C. KIoc, T. Slegrist, W. Li, Y. Y. Lin, and A. Dodabalapur, Nature (London) 404, 478 (2000).
44. D. J. Gundlach, Y.-Y. Lin, T. N. Jackson, S. F. Nelson, and D. G. Schlom, IEEE Electron Device Lett. 18, 87 (1997).