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Volumn 47, Issue 5 PART 1, 2008, Pages 3441-3443
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Metamorphic in0.53Ga0.47as metal-oxide-semiconductor structure on a gaAs substrate with zro2 high-κ dielectrics
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Author keywords
Metal oxide semiconductor capacitors; Metamorphic In0.53Ga0.47As; Zirconium dioxide
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Indexed keywords
ANNEALING;
CAPACITANCE;
CAPACITORS;
ELECTRIC CONDUCTIVITY;
ELECTRIC EQUIPMENT;
ELECTRIC PROPERTIES;
GALLIUM ALLOYS;
HETEROJUNCTION BIPOLAR TRANSISTORS;
MOS CAPACITORS;
PASSIVATION;
SEMICONDUCTING INDIUM;
SEMICONDUCTOR MATERIALS;
SULFUR;
SURFACE CLEANING;
SURFACE TREATMENT;
ZIRCONIUM;
ZIRCONIUM ALLOYS;
AIR EXPOSURES;
CAPACITANCE-VOLTAGE;
ELECTRICAL PROPERTIES;
GAAS SUBSTRATES;
MATERIAL ANALYSES;
METAMORPHIC IN0.53GA0.47AS;
PERFORMANCE DEGRADATIONS;
POST DEPOSITIONS;
SEMICONDUCTOR CAPACITORS;
SEMICONDUCTOR STRUCTURES;
STATE DENSITIES;
SULFIDATION;
SULFUR PASSIVATIONS;
SULFUR TREATMENTS;
ZIRCONIUM DIOXIDE;
DIELECTRIC DEVICES;
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EID: 55049107561
PISSN: 00214922
EISSN: 13474065
Source Type: Journal
DOI: 10.1143/JJAP.47.3441 Document Type: Article |
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Times cited : (2)
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References (9)
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