Synchrotron photoemission spectroscopy study of ammonium hydroxide etching to prepare well-ordered GaAs(1 0 0) surfaces

Applied Surface Science

Volumn 229, Issue 1-4, 2004, Pages 226-232

  Lebedev, Mikhail V ^a,b   Ensling, David ^a   Hunger, Ralf ^a   Mayer, Thomas ^a   Jaegermann, Wolfram ^a  

^a DARMSTADT UNIVERSITY OF TECHNOLOGY   (Germany)

^b IOFFE INSTITUTE   (Russian Federation)

Author keywords

Ammonia; Etching; GaAs (100); Photoemission spectroscopy

Indexed keywords

AMMONIA; ANNEALING; CONTAMINATION; DIMERS; ETCHING; GALLIUM COMPOUNDS; LOW ENERGY ELECTRON DIFFRACTION; PHOTOEMISSION; SOLUTIONS; SYNCHROTRONS;

PHOTOEMISSION SPECTROSCOPY (PES); POLAR SEMICONDUCTORS;

AMMONIUM COMPOUNDS;

EID: 2342458351     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2004.01.067     Document Type: Article

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