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Volumn 93, Issue 12, 2008, Pages

Performance enhancement of n -channel inversion type Inx Ga 1-x As metal-oxide-semiconductor field effect transistor using ex situ deposited thin amorphous silicon layer

(7) Sonnet, A M a Hinkle, C L a Jivani, M N a Chapman, R A a Pollack, G P a Wallace, R M a Vogel, E M a

a The University of Texas at Dallas (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FIELD EFFECT TRANSISTORS; METALS; SEMICONDUCTING INDIUM;

METAL-OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR; N -CHANNEL; PERFORMANCE ENHANCEMENTS; TRANSPORT CHARACTERISTICS;

MOSFET DEVICES;

EID: 52949119905 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.2991340 Document Type: Article

Times cited : (54)

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