XPS study of the surface Fermi level of (NH4)2Sx-passivated GaAs(1 0 0) surface

Vacuum

Volumn 67, Issue 1, 2002, Pages 53-58

  Szuber, J ^a   Bergignat, E ^b   Hollinger, G ^b   Polakowska, A ^a   Koscielniak P ^a  

^a SILESIAN UNIVERSITY OF TECHNOLOGY   (Poland)

^b INSTITUT DES NANOTECHNOLOGIES DE LYON   (France)

Author keywords

Gallium arsenide surface; Passivation; Sulfidation; X ray photoelectron spectroscopy

Indexed keywords

ANNEALING; BINDING ENERGY; ELECTRONIC PROPERTIES; PASSIVATION; POLYSULFIDES; SEMICONDUCTING GALLIUM ARSENIDE; X RAY PHOTOELECTRON SPECTROSCOPY;

SULFIDATION;

FERMI LEVEL;

EID: 0037009209     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0042-207X(02)00193-8     Document Type: Conference Paper

References (16)