Band offsets at interfaces of (1 0 0)InxGa1-xAs (0 ≤ x ≤ 0.53) with Al2O3 and HfO2

Microelectronic Engineering

Volumn 86, Issue 7-9, 2009, Pages 1550-1553

  Afanas'ev, V V ^a   Stesmans, A ^a   Brammertz, G ^b   Delabie, A ^b   Sionke, S ^b   O'Mahony, A ^c   Povey, I M ^c   Pemble, M E ^c   O'Connor, E ^c   Hurley, P K ^c   Newcomb, S B ^d  

^a UNIVERSITY OF LEUVEN   (Belgium)

^b IMEC   (Belgium)

^c UNIVERSITY COLLEGE CORK   (Ireland)

^d Glebe Scientific Ltd   (Ireland)

Author keywords

Interface barrier; Internal photoemission; Semiconductor insulator interface

Indexed keywords

BAND GAP NARROWING; BAND OFFSETS; DEPOSITED INSULATOR; ELECTRON BARRIER; ELECTRON ENERGY BAND; ELECTRON STATE; INTERFACE BARRIER; INTERNAL PHOTOEMISSION; SEMICONDUCTOR CONDUCTION; SEMICONDUCTOR-INSULATOR INTERFACE;

ALUMINUM; ELECTRON MOBILITY; ELECTRONS; HAFNIUM COMPOUNDS; PHOTOEMISSION;

INDIUM;

EID: 67349198455     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2009.03.003     Document Type: Article

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