Optimization of surface passivation for InGaAs/InP pin photodetectors using ammonium sulfide

Semiconductor Science and Technology

Volumn 23, Issue 3, 2008, Pages

  Sheela, D ^a   Dasgupta, Nandita ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY MADRAS   (India)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIUM COMPOUNDS; DARK CURRENTS; ELECTROCHEMISTRY; INDIUM PHOSPHIDE; OPTIMIZATION; PASSIVATION; SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

AMMONIUM SULFIDE; ELECTROCHEMICAL PASSIVATION; SURFACE PASSIVATION;

PHOTODETECTORS;

EID: 42549086845     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/23/3/035018     Document Type: Article

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