GaAs metal-oxide-semiconductor capacitors using atomic layer deposition of HfO 2 gate dielectric: Fabrication and characterization

Applied Physics Letters

Volumn 91, Issue 19, 2007, Pages

  Shahrjerdi, D ^a   Garcia Gutierrez, D I ^a,b   Akyol, T ^a   Bank, S R ^a   Tutuc, E ^a   Lee, J C ^a   Banerjee, S K ^a  

^a The University of Texas at Austin   (United States)

^b SEMATECH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC OXIDES; FREQUENCY DISPERSION; METALLIC PRECURSOR;

ATOMIC LAYER DEPOSITION; HAFNIUM; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; MOS DEVICES; SEMICONDUCTING GALLIUM ARSENIDE; X RAY PHOTOELECTRON SPECTROSCOPY;

GATE DIELECTRICS;

EID: 36048932797     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2806190     Document Type: Article

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