In situ H2S passivation of In0.53Ga 0.47As/InP metal-oxide-semiconductor capacitors with atomic-layer deposited HfO2 gate dielectric

Applied Physics Letters

Volumn 92, Issue 2, 2008, Pages

  O'Connor, E ^a   Long, R D ^a   Cherkaoui, K ^a   Thomas, K K ^a   Chalvet, F ^a   Povey, I M ^a   Pemble, M E ^a   Hurley, P K ^a   Brennan, B ^b   Hughes, G ^b   Newcomb, S B ^c  

^a UNIVERSITY COLLEGE CORK   (Ireland)

^b DUBLIN CITY UNIVERSITY   (Ireland)

^c Glebe Scientific Ltd   (Ireland)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITION; HYDROGEN INORGANIC COMPOUNDS; OXIDATION; VAPOR PHASE EPITAXY; X RAY PHOTOELECTRON SPECTROSCOPY;

ORGANIC VAPOR-PHASE; OXIDE FORMATION;

GATE DIELECTRICS;

EID: 38349175640     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2829586     Document Type: Article

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