Electrical and material characterization of atomic-layerdeposited Al 2O3 gate dielectric on ammonium sulfide treated GaAs substrates

Journal of Physics: Conference Series

Volumn 100, Issue PART 4, 2008, Pages

  Cheng, Chao Ching ^a   Chien, Chao Hsin ^a,b   Luo, Guang Li ^b   Chang, Ching Chih ^a   Kei, Chi Chung ^c,d   Yang, Chun Hui ^b   Hsiao, Chien Nan ^c   Perng, Tsong Pyng ^d   Chang, Chun Yen ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

^c INSTRUMENT TECHNOLOGY RESEARCH CENTER   (Taiwan)

^d NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; DISPERSIONS; GALLIUM ARSENIDE; GATE DIELECTRICS; LEAKAGE CURRENTS; SEMICONDUCTING GALLIUM; SULFUR COMPOUNDS; ALUMINA; ALUMINUM OXIDE; ATOMIC LAYER DEPOSITION; CHARGE TRAPPING; III-V SEMICONDUCTORS; NANOSCIENCE; VACUUM APPLICATIONS;

CAPACITANCE-EQUIVALENT THICKNESS; CAPACITANCE-VOLTAGE CHARACTERISTICS; FERMI LEVEL PINNING; FREQUENCY DISPERSION; GATE-LEAKAGE CURRENT; INTERFACIAL PROPERTY; MATERIAL CHARACTERIZATIONS; ORDERS OF MAGNITUDE; ATOMIC LAYER DEPOSITED;

ALUMINUM; CAPACITANCE;

EID: 77954335246     PISSN: 17426588     EISSN: 17426596     Source Type: Conference Proceeding    
DOI: 10.1088/1742-6596/100/4/042002     Document Type: Conference Paper

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