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Volumn 201, Issue 5, 2004, Pages 1017-1021
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Effects of (NH4)2S passivation on the performance of graded-base InGaAs/InP HBTs
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Author keywords
[No Author keywords available]
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Indexed keywords
DEGRADATION;
ELECTRIC CURRENTS;
ELECTRONIC EQUIPMENT;
ETCHING;
GAIN CONTROL;
LITHOGRAPHY;
PASSIVATION;
SEMICONDUCTING INDIUM GALLIUM ARSENIDE;
SEMICONDUCTOR JUNCTIONS;
THERMAL EFFECTS;
CURRENT GAIN;
EMITTER SIZE;
SURFACE RECOMBINATION;
NITROGEN COMPOUNDS;
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EID: 2442562563
PISSN: 00318965
EISSN: None
Source Type: Journal
DOI: 10.1002/pssa.200306773 Document Type: Conference Paper |
Times cited : (12)
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References (8)
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