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Volumn 201, Issue 5, 2004, Pages 1017-1021

Effects of (NH4)2S passivation on the performance of graded-base InGaAs/InP HBTs

Author keywords

[No Author keywords available]

Indexed keywords

DEGRADATION; ELECTRIC CURRENTS; ELECTRONIC EQUIPMENT; ETCHING; GAIN CONTROL; LITHOGRAPHY; PASSIVATION; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR JUNCTIONS; THERMAL EFFECTS;

EID: 2442562563     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssa.200306773     Document Type: Conference Paper
Times cited : (12)

References (8)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.