The defect density of a SiNx/In0.53Ga 0.47As interface passivated using (NH4)2S x

Applied Physics A: Materials Science and Processing

Volumn 91, Issue 4, 2008, Pages 651-655

  Tang, H J ^a   Wu, X L ^a,b   Zhang, K F ^a,b   Li, Y F ^a,b   Ning, J H ^a,b   Wang, Y ^a   Li, X ^a   Gong, H M ^a  

^a SHANGHAI INSTITUTE OF TECHNICAL PHYSICS   (China)

^b UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE DENSITY; CURRENT VOLTAGE CHARACTERISTICS; DEFECT DENSITY; INTERFACES (MATERIALS); PASSIVATION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DIODES; X RAY PHOTOELECTRON SPECTROSCOPY;

METAL INSULATOR SEMICONDUCTOR DIODES; SULFIDATION; SURFACE STATE DENSITY;

SILICON NITRIDE;

EID: 43449098498     PISSN: 09478396     EISSN: 14320630     Source Type: Journal    
DOI: 10.1007/s00339-008-4500-8     Document Type: Article

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