InAs/GaSb superlattice detectors operating at room temperature

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 12, Issue 6, 2006, Pages 1269-1274

  Plis, Elena ^a   Lee, Sang Jun ^a   Zhu, Zhimei ^a   Amtout, Abdenour ^a   Krishna, Sanjay ^a  

^a University of New Mexico   (United States)

Author keywords

Charge carrier; Infrared image sensors; Passivation; Semiconductor growth; Superlattices

Indexed keywords

CHARGE CARRIERS; IMAGE SENSORS; LIGHT TRANSMISSION; MOLECULAR BEAM EPITAXY; PASSIVATION; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SUPERLATTICES; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

INFRARED IMAGE SENSORS; PICOSECOND EXCITATION CORRELATION (PEC); SURFACE RECOMBINATION VELOCITY; VARIABLE ARRAY DIODE ANALYSIS (VADA);

INFRARED DETECTORS;

EID: 33845678498     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSTQE.2006.882641     Document Type: Article

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