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Volumn 67, Issue 1, 2002, Pages 43-52
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Modification of GaAs(1 0 0) and GaN(0 0 0 1) surfaces by treatment in alcoholic sulfide solutions
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Author keywords
Alcoholic solutions; Electronic properties of surface; Sulfide passivation; Surface structure
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Indexed keywords
ATOMIC FORCE MICROSCOPY;
FERMI LEVEL;
PASSIVATION;
PERMITTIVITY;
PHOTOLUMINESCENCE;
REACTION KINETICS;
SEMICONDUCTOR MATERIALS;
SOLUTIONS;
SURFACE STRUCTURE;
X RAY PHOTOELECTRON SPECTROSCOPY;
ALCOHOLIC SULFIDE SOLUTIONS;
SEMICONDUCTING GALLIUM COMPOUNDS;
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EID: 0037009212
PISSN: 0042207X
EISSN: None
Source Type: Journal
DOI: 10.1016/S0042-207X(02)00199-9 Document Type: Conference Paper |
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Times cited : (23)
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References (32)
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