Preparation of clean GaAs(100) studied by synchrotron radiation photoemission

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 21, Issue 1, 2003, Pages 212-218

  Liu, Zhi ^a   Sun, Yun ^a,b   Machuca, Francisco ^c   Pianetta, Piero ^b,c   Spicer, W E ^b,c   Pease, R F W ^c  

^a STANFORD UNIVERSITY   (United States)

^b SLAC NATIONAL ACCELERATOR LABORATORY   (United States)

^c Stanford University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL CLEANING; CONTAMINATION; ETCHING; KINETIC ENERGY; PHOTOEMISSION; SPECTROSCOPIC ANALYSIS; STOICHIOMETRY; SURFACE STRUCTURE; SYNCHROTRON RADIATION; ULTRAHIGH VACUUM;

GALLIUM ARSENIDE; HIGH RESOLUTION PHOTOEMISSION SPECTROSCOPY;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0037276121     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1532737     Document Type: Article

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